Waveguide fabrication methods and devices

ABSTRACT

A method of writing a waveguide using an ultrashort laser beam is disclosed. The laser beam is directed to a substrate in transverse relation to a waveguide propagation axis to generate an ultrashort laser pulse focus in the substrate. A refractive index is modified in an affected region in the substrate along the waveguide propagation axis via the ultrashort laser pulse focus, and the ultrashort laser pulse focus is moved in a direction other than the waveguide propagation axis to generate a widened affected region along the waveguide propagation axis. The widened affected region has a cross-sectional profile capable of supporting a fundamental mode of a signal having a telecommunications infrared (TIR) wavelength, while the affected region has a cross-sectional profile incapable of supporting the fundamental mode of the signal having the TIR wavelength.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional of U.S. application Ser. No.10/676,972, filed on Sep. 30, 2003 now U.S. Pat. No. 7,294,454, whichclaims the benefit of U.S. Provisional Application No. 60/414,765, filedSep. 30, 2002, which is incorporated herein by reference.

GENERAL FIELD

The disclosure relates generally to optical waveguides and, morespecifically, to a method of altering physical or opticalcharacteristics of an optical medium using an ultrashort laser tofabricate an optical waveguide in the bulk of the optical medium.

BACKGROUND

Ultrashort laser pulses have been used to modify the refractive index oftransparent materials, such as glasses of various compositions, for thetrimming of optical waveguides and fabrication of fiber-based opticaldevices, such as fiber Bragg gratings. Laser-based trimming techniqueshave been utilized in connection with planar waveguides formed viawell-known photolithography, diffusion, and etching techniques. Suchtechniques are useful for modifying the refractive index profile of thepre-existing, planar waveguide. For example, the ultrashort laser pulsesare typically applied to modify the optical path length of thewaveguide.

Pulse energy, pulse width, scan rate, and repetition frequency have beenidentified as process parameters relevant to determining the nature andextent of the trimming operation. For example, the shape of apre-existing waveguide has been modified via application of ultrashortwaveguide pulses to taper a portion thereof. Other ways in which thetrimming technique has been used to locally alter the physical structureof a pre-existing waveguide include adjusting the polarization behaviorof the waveguide to create approximately symmetric regions of indexchange. Such techniques may involve writing index changes within thepre-existing waveguide that are slightly laterally displaced from eachother. See U.S. Patent Application Pub. No. 20020085824 A1, publishedJul. 4, 2002, and entitled “Index trimming of optical waveguide devicesusing ultrashort laser pulses for arbitrary control of signal amplitude,phase, and polarization.”

The above-identified, prior techniques have generally been directed tothe modification of pre-existing waveguides that are already capable ofguiding light of a desired wavelength. Moreover, the waveguides havebeen typically fabricated using non-laser-based methods, such asphotolithography. These methods are fairly limited to the surface of thesubstrate, in turn typically limiting the functionality of devicesfabricated thereby to the two-dimensional interactions in that planarsurface.

Another complication involves the wavelength of the optical signal.Wavelength can be a limiting factor for any waveguide—whether at thesurface or in the bulk—because certain waveguides that guide light atone wavelength may be incapable of guiding light at longer wavelengths.As the telecommunications industry migrates to systems based on opticalsignals having wavelengths at or near 1.55 microns, the opticalwaveguides and other devices that were effective in different regimes,such as 800 nm, may no longer provide suitable performance or, in somecases, may be incapable of guiding light at all.

SUMMARY OF THE INVENTION

In accordance with an embodiment, provided is a method of writing awaveguide. The refractive index is modified in an affected region in thesubstrate along the waveguide propagation axis via the ultrashort laserpulse focus, and the ultrashort laser pulse focus is moved in adirection other than the waveguide propagation axis to generate awidened affected region along the waveguide propagation axis. Theaffected region has a cross-sectional profile incapable of supportingthe fundamental mode of a signal having a telecommunications infrared(TIR) wavelength, but the widened affected region has a cross-sectionalprofile capable of supporting the fundamental mode of the signal.

In accordance with another embodiment, provided is a method of writing awaveguide including the steps of modifying a refractive index in anaffected region in a substrate along a waveguide propagation axis via anultrashort laser pulse focus, and scanning an ultrashort laser pulsefocus in a direction other than the waveguide propagation axis togenerate a widened affected region along the waveguide propagation axis.The scanning step is performed during performance of the modifying step.

In still another embodiment, a method of writing a waveguide isprovided. A refractive index is modified in an affected region in asubstrate along a waveguide propagation axis via an ultrashort laserpulse focus, and the ultrashort laser pulse focus is moved in adirection other than the waveguide propagation axis to generate awidened affected region along the waveguide propagation axis. Theultrashort laser pulse beam has a polarization in a direction parallelto the waveguide propagation axis.

In another embodiment, an optical waveguide device is provided anddisposed in a substrate along a waveguide propagation axis. A pluralityof adjacent waveguide portions are disposed along the waveguidepropagation axis, each waveguide portion having a cross-sectionalrefractive index profile incapable of supporting a fundamental mode of asignal having a telecommunications infrared (TIR) wavelength. Theplurality of adjacent waveguide portions have a collectivecross-sectional refractive index profile capable of supporting afundamental mode of the signal having the telecommunications infrared(TIR) wavelength.

Further aspects and advantages may become apparent to those skilled inthe art from a review of the following detailed description, taken inconjunction with the drawings. While the optical devices and fabricationmethods are susceptible of embodiments in various forms, the descriptionhereafter includes specific embodiments with the understanding that thedisclosure is illustrative, and is not intended to limit the inventionto the specific embodiments described herein.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a graphical, cross-sectional representation of themodification of the refractive index profile of an optical medium aftera single ultrashort laser pulse beam has been transversely applied tothe optical medium in a single pass.

FIGS. 2A and 2B are graphical, cross-sectional representations of themodification of the refractive index profile of an optical medium afteran ultrashort laser pulse beam has been transversely applied to theoptical medium in accordance with one or more of the waveguidefabrication techniques disclosed herein.

FIG. 3 is an illustration of an ultra-short pulse laser beam focusedwithin an optical medium in accordance with one or more of the waveguidefabrication techniques disclosed herein.

FIG. 4 is an illustration of multiple affected regions formed within anoptical medium using one or more of the waveguide fabrication techniquesdisclosed herein.

FIG. 5 is a cross-sectional illustration taken along line 3-3 of FIG. 4of the waveguide profile formed via one or more of the waveguidefabrication techniques disclosed herein.

DETAILED DESCRIPTION OF EMBODIMENTS

Described herein are methods of fabricating waveguides defined byrefractive index profiles having sizes, shapes and other characteristicssuitable for the optical propagation of certain signals of interest. Thewaveguide fabrication methods described herein create the refractiveindex profile via the application of ultrashort laser pulses to thetransparent material or medium in which the waveguide is formed. Usingone or more beam foci, the waveguide formed via the methods describedherein has a shaped refractive index profile suitable for propagation ofoptical signals in a number of different wavelength regimes.

The disclosed fabrication methods may be described as direct-writingtechniques where an ultrashort laser pulse focus of a writing beam ismoved in two or three dimensions rather than the single dimensiondefining the waveguide propagation axis, i.e., the axis running alongthe length of the waveguide. During such non-axial movement, thephysical properties of the writing beam or the optical medium may eitherbe maintained (i.e., held constant) or varied to produce other waveguidecharacteristics. The resulting refractive index profile may be tailoredand, consequently, not limited to the initial geometry of the affectedvolume or voxel (i.e., the region in which the laser beam is ofsufficiently high intensity to modify the refractive index of theoptical medium) associated with the writing beam.

Generally speaking, relative motion in the non-axial direction(s) may bedone sequentially or simultaneously, by either moving the writingbeam(s) or by moving the sample. Such writing techniques may be appliedto obtain a desired refractive index shape of regions or volumes ofmodified refractive index that are contiguous, discrete, or somecombination thereof. In this manner, an index profile is generated foroptimal propagation of light at a desired wavelength with a desiredoutput mode profile. A contiguous refractive index profile should beunderstood to include both (1) profiles are written by continuousdeflection of the laser pulse focus, and (2) profiles that are writtendiscontinuously but that result in index profiles that are contiguous oroverlapping.

The disclosed methods may be used to fabricate a waveguide having two ormore adjacent affected regions within a substrate or medium where eachregion has an altered or modified refractive index. Each affected regionhas a cross-sectional profile with dimensions insufficient to propagatea signal of a desired wavelength, such as a wavelength useful in thetelecommunications industry. The regions are disposed or written in thesubstrate in either a proximate or contiguous manner, or both, such thatthe signal is not confined separately in any one of the affectedregions. The signal instead propagates in a mode that overlaps andincludes all of the affected regions, such that, collectively, theaffected regions constitute a single widened affected region, as will beexplained further below.

The waveguides fabricated by the methods described herein may, but neednot be, formed in the bulk of an optical medium or substrate, e.g.,glass or fused silica, such that the waveguides are characterized asin-bulk waveguides. The waveguides may still be formed at or near asurface of an optical substrate, such as with a planar waveguide, oralternatively within the bulk of a single or multi-layer substrate.

The optical characteristic “refractive index” is used herein to refer tothe effective index of refraction experienced by a signal propagatingthrough the waveguide structure. The transverse shape or mode profile ofthe signal extends into the optical medium beyond the transversedimensions of the waveguide, a region referred to as the evanescentregion. The effective index of refraction, therefore, represents thelocal index of refraction variation over the mode profile of a signal.For a single mode waveguide, the signal profile associated with theeffective index of refraction is that of the fundamental mode. In amultimode waveguide an effective index of refraction can be associatedwith all waveguide modes activated by the propagating signal. Theeffective index of refraction is, therefore, also dependent onproperties of the signal, such as wavelength. In fact, the effectiveindex of refraction is used to define waveguide dispersion for a givenmode of a propagating signal. Herein the refractive index, or effectiveindex of refraction of a signal, will represent that of the fundamentalmode in a single mode waveguide or the net effective index of refractionof all active modes in a multimode waveguide.

In one embodiment, the described methods are directed toward thefabrication of waveguide devices that propagate signals of standardtelecommunications wavelengths. Of interest are telecommunicationsinfrared wavelengths, such as those above one micron, where low signalloss fiber communications typically occur. This wavelength range will bereferenced herein as the TIR (telecommunications infrared) band. Adevice fabricated for operation with a signal having a TIR wavelengthshall be understood to operate in the TIR band, which may include one ormore optical communication windows, such as those centered at 1310 nmand 1550 nm, where low loss transmission occurs with low chromaticdispersion. It should be noted that a limited number of opticalcommunication networks have utilized signals having wavelengths near 850nm. Such wavelengths, however, are not to be considered within the TIRband because operation at such wavelengths has problematicallyencountered higher losses and excessive chromatic dispersion.

The embodiments described hereinbelow take advantage of the direct-writecapability of ultrashort pulsed lasers. Ultrashort laser pulses areherein defined to include laser pulses below 1 picosecond in duration,and may further include sub-100 femtosecond laser pulses. Laserssuitable for generating ultrashort pulses are generally available from anumber of companies and other sources, including Coherent, Inc. (SantaClara, Calif.) under the trade name “RegA” and Spectra Physics (MountainView, Calif.) under the trade name “Tsunami.” Such ultrashort pulsedlasers can typically achieve pulse widths of less than 100 femtoseconds.Direct-writing within an optical material may be achieved with pulseenergies of nano-Joules to several micro-Joules depending on the pulsewidths as well as focusing optics.

Further details regarding the use of ultrashort laser pulses to modifythe refractive index may be found in the U.S. patent applicationentitled “Method of Index Trimming a Waveguide and Apparatus Formed ofthe Same” and having Ser. No. 09/930,929, the specification of which ishereby incorporated by reference.

Direct-write waveguide fabrication is performed using a beam ofultrashort laser pulses. As discussed, waveguide fabrication can occurin any portion of a transparent medium. When laser pulses are focused,the focusing depth or Rayleigh range region is longer than the spot sizediameter. The focusing depth or confocal beam parameter is given byZ₀=nπw₀ ²/λ, where λ is the wavelength of the laser light, and w₀ is thebeam radius. Using appropriate focusing geometry, the ultrashort pulsescan be focused in the bulk of a transparent medium, such as glass, toestablish a desired beam waist diameter.

But the focusing depth, or three-dimensional region of refractive indexmodification, will be larger. For example, in glass, if the beam radiusat focus is one micron, then the focusing depth will be about 6 micronfor a wavelength of 0.8 microns. As a result, the cross-section of theaffected region of refractive index modification (or cross-sectionalrefractive index profile) may have approximately a 6 to 1 ellipticity.That is, when focused to a spot, such ultrashort laser beams have aniso-intensity distribution that is shaped like an ellipsoid. A waveguidemanufactured with this type of focusing setup will have an ellipticalcross-section. Experimental data has confirmed this, as shown in thecross-sectional dimensions of one waveguide: 1.5×9.0 microns (see FIG.1). Other effects such as spherical aberrations and nonlinearitiesinside the glass can also affect the shape of the laser-induced indexchange of the material. It should be noted that dimensions specifiedherein are measured via the full-width, half-maximum convention wellknown to those skilled in the art.

This inherent ellipticity, however, would complicate the writing ofwaveguides for certain applications in a transverse manner, where theultrashort laser beam is directed to the substrate in transverserelation to a waveguide propagation axis. Given an index change of5×10⁻³ (a typical value in fused silica), the waveguiding properties ofthese small, elliptical cross-section waveguides are too weak for manyapplications of interest. Further, the elliptical shape results insignal propagation that is dependent upon signal polarization.

Certain embodiments of the fabrication method disclosed herein providefor fabricating waveguides having an enlarged cross-section to, in turn,provide waveguiding for the signals of interest. Further, creation ofsymmetrical cross-sections reduces or eliminates polarization dependencein signal propagation.

FIG. 1 shows the cross-sectional refractive index profile of a waveguide100 written in a bulk glass sample (or substrate) transversely. Moreparticularly, the graph depicts the shape of the waveguide 100 in anaffected region of refractive index modification within the substrate inspatial dimensions (microns) as well as via the magnitude of refractiveindex modification (shading). A transverse writing technique may bedescribed as moving the ultrashort laser pulse focus through the samplein a direction that is orthogonal to the direction of the ultrashortlaser beam. Writing transversely may also be described in relation to anaxis of the waveguide to be written, or waveguide propagation axis.Transverse writing involves directing the ultrashort laser beam to thesubstrate in transverse relation to the waveguide propagation axis. Theultrashort laser pulse focus is then moved via relative motion of thesubstrate with respect to the laser pulse beam along the waveguidepropagation axis.

The waveguide 100 was written with an ultrashort laser beam at awavelength of 800 nm with 100 fs pulses at a repetition rate of 250 kHzand an average power of approximately 25 mW. As described above, theaffected region of the waveguide 100 has an elliptically-shapedcross-sectional profile, which may not be suitable for propagation ofsignals at certain wavelengths, such as a TIR wavelength. That is, thewidth of the refractive index profile may not be large enough to guidelight at longer wavelengths and the waveguide may also exhibit strongpolarization effects.

With certain embodiments of the fabrication methods described herein,one can tailor the shape and size of the region having a modifiedrefractive index to control the optical properties of the waveguide,such as guiding strength, cutoff wavelength, polarization dependence,scattering losses, and leakiness. These fabrication methods aregenerally referred to herein as “painting techniques” and the tailoredregion having a modified refractive index is generally referred to as awidened affected region.

FIGS. 2A and 2B show the refractive index profiles of the widenedaffected regions of waveguides 200 and 202 written in bulk glass samplestransversely utilizing exemplary painting techniques constituting twoembodiments of the improved fabrication method described herein. Thewaveguides 200 and 202 were written using a skip-and-scan embodiment ofthe disclosed method having 13 separate, distinct and adjacent passes ofthe laser pulse beam (or paths of the ultrashort laser pulse focus) thatwere sequentially performed, where each pass includes a four-times overretrace to saturate the index change within the region affected by thepass. The number of passes may range up to twenty, or more, if a largerectangular cross-sectional profile is desired. Such cross-sectionalprofiles may be useful in certain multimode interference devices.Scanning sequentially involves a pattern of scanning adjacent paths togenerate a number of adjacent affected regions sequentially, and is onlyone approach to painting the profile. A sequential scanning pattern maynot be suitable for certain devices—e.g., a Y coupler may require adifferent scanning pattern (e.g., alternating scans such that adjacentregions or paths are not scanned sequentially to the extent possible)than an evanescent coupler. Generally speaking, the scanning pattern maybe relevant because one scanning pass may have an effect on an adjacentor contiguous region. Whether such adjacent or contiguous region hasalready been scanned has been shown to affect the characteristics of theresulting waveguide.

The skip-and-scan approach used to fabricate the waveguides 200 and 202incorporated a number of scans with a certain scan separation designedto generate a square cross-section and a uniform index profile. Thepaths may be separated by about 0.5 microns (center-to-center distancebetween adjacent paths) to avoid too much modulation of the refractiveindex profile. Smaller spacing may provide smoother profiles, but wouldof course require more passes to obtain the same square cross-section.In general, the scan separation is chosen to avoid asymmetry (but, insome cases, asymmetry may be desirable).

The waveguide 200 has a cross-sectional profile with smoother edges thanthe waveguide 202, which has a ripple effect that may result from askip-and-scan embodiment of the painting technique wherein thecenter-to-center distance of the scans or paths is greater than the sizeof the affected region resulting from each scan. Further informationregarding the skip-and-scan and other fabrication techniques will beprovided below. Such other techniques may be used to avoid the rippleeffect, as desired (which is not always the case).

Generally, the cross-sectional shape of the refractive index profile ofthe waveguide to be written may be generated using a number of beamscanning methodologies described below, each of which is designed towrite a desired refractive index profile. Within cross-sectionalshaping, the scanning methodologies or painting techniques may be usedto address both global and local shaping requirements. Global shaping isneeded to match the waveguides to the operating wavelength of thewaveguide device. For example, waveguides operating in the TIR band havelarger or wider cross-sections than waveguides designed for the visible.Local shaping may be used to impart customized functionality to asection of the optical devices. While most photolithographicmanufacturing processes can shape waveguides in two dimensions, thedisclosed techniques are capable of providing full three-dimensionalshaping capability.

By locating several elliptical affected regions very close to eachother, one can create a “super-waveguide” with a square or rectilinearcross section. In one embodiment, ten to 15 “stripes” may be “painted”to form a good waveguide (e.g., for operation in the 1550-nm TIRwindow). The process steps and focusing setup showing the fabrication ofthe square waveguide can be seen in the text of U.S. ProvisionalApplication Ser. No. 60/414,765, the subject matter of which is herebyincorporated by reference in its entirety. See also the cross-sectionalrefractive index profiles of the widened affected regions of thewaveguides 200 and 202 shown in FIGS. 2A and 2B.

Using the disclosed painting techniques, one can control thecross-sectional profile at the global and local level. At the globallevel, such techniques provide a way to fabricate waveguides withcross-sections optimized for single-mode propagation. Without thepainting approach, one may be limited to manufacturing waveguides withelliptical cross-sections. Elliptical waveguides are plagued with largepolarization-dependent losses and, in particular, not suitable forsignals transmitted in telecommunication applications. In addition,elliptical waveguides tend to be multimode along one axis and singlemode along the others, which is unacceptable in many applications. Withthe implementation of a painting-based process, such problems areaddressed and testing has shown substantially decreased losses forsignals propagating in the TIR window centered at 1550 nm andsignificantly reduced polarization dependence.

At the local level, painting techniques may be used to reducemode-matching loss resulting from mismatch between the device(waveguide) cross-section and the cross section of the fiber(s) or otheroptical devices forming the input/output or other interfaces with theexternal world. To address such losses and other issues, spatialtapering via the painting process may be used.

FIG. 3 shows the skip-and-scan method of fabricating a waveguideindicated generally at 300 existing in the bulk of an optical substrate302. Alternatively, the waveguide 300 could be part of a waveguidedevice such as an AWG, Mach Zehnder Interleaver, or another type ofwaveguide structure such as an optical fiber. While the substrate 302 isshown as a single structure, it could alternatively be made of multiplesubstrates sandwiched together to house the waveguide 300. The substrate302 may be made of any material that is transparent or substantiallytransparent at the writing wavelength (e.g., 800 nm), and the wavelengthof interest for signals of the application (e.g., a TIR wavelength).Some examples would include any optical glass, fused silica, and otheroptoelectronic materials, such as Lithium niobate.

To fabricate the waveguide 300 in accordance with the embodiment shownin FIG. 3, a beam of ultra-short pulses of light 304 is focused by alens 306 into the substrate 302, or more specifically in the substrate302 at a position coinciding with a portion of the waveguide 300. Inthis embodiment, the shape of the waveguide 300, which eventually couldbe, for example, square, rectangular, elliptical or circular incross-section, will be established via multiple scans of the light pulsebeam 304. For any one given scan, the spatial profile of the beam 304has a Gaussian TEM₀₀ intensity profile and is focused by the lens 306 toa Gaussian beam waist (not shown). As described in the above-identifiedapplication, the focused beam 304 of ultrashort pulses induces amodified index of refraction profile over an ellipsoidal affected volumeor region 308. This affected region 308 eventually constitutes a portionof the waveguide 300 as the ultrashort laser pulse focus is moved inrelative fashion along the waveguide propagation axis (shown as thex-axis in FIG. 3). Another portion of the waveguide 300 that has alreadybeen written is also shown in FIG. 3 and is adjacent to the portionincluding the affected region 308.

The embodiment shown in FIGS. 3-5 may be referred to as a“skip-and-scan” approach because one portion of the waveguide 300 iswritten and then the ultrashort laser pulse focus is then skipped to anew position in a direction other than the waveguide propagation axis.This direction may be, for example, a lateral or vertical direction(shown in FIG. 3 as the y-axis and z-axis, respectively), or any otherdirection that will result in the writing of a path that will becomepart of the widened affected region.

So, in a simple embodiment, if the laser beam is directed along thez-axis, and the waveguide is being written along the x-axis (such thatthe waveguide propagation axis is said to be the x-axis), then afterwriting a first pass (as shown in FIG. 3), the laser pulse focus may bemoved a certain distance along the y-axis before starting the secondpass, and so on. The incremental change along the y-axis may be smallenough such that the resulting two adjacent affected regions overlap.The incremental change may alternatively proceed such that two adjacentaffected regions are not written consecutively.

For example, the focus of the beam or the sample is scanned in a pathone or more times along the waveguide propagation axis, then the focusis moved a selected distance transversely to this axis. If adjacentpaths are to be written, the selected distance may be, for example, 0.5microns or 1.0 microns in center-to-center path distance. If adjacentpaths are not to be written sequentially, then the selected distance mayinclude some added distance to alternate the path writing sequence.

This method of moving the laser pulse focus in a direction other thanthe waveguide propagation axis may be continuous or discontinuous. Thatis, while the focus is skipped, or moved to the new position, the laserpulse beam may continue writing (continuous) or may cease writing(discontinuous). If the laser pulse focus is moved back to a startingpoint of the waveguide for each path, such that the affected regionalways moves along the waveguide propagation axis in the same direction,then discontinuous skip-and-scan may be used. Conversely, if the laserpulse focus is moved along the waveguide propagation axis in bothdirections, then continuous skip-and-scan may be used.

The scanning path of the manufacturing laser beam may be repositionedthrough discrete lateral (or other) stepping through the use ofmechanical stages. In contrast, other embodiments to be described below(e.g., acousto-optic-based or rasterized scanning) may involvecontinuous repositioning.

The skip-and-scan approach may be implemented in several ways. In oneembodiment, the beam may scan a region or line repetitively beforemoving to another region or line. However, this approach should not belimited to a procedure in which the beam scans a region or linerepetitively before being moved laterally. Alternatively, a region orline is scanned, one or more other regions or lines is scanned, and theprocess is repeated.

For example, one embodiment may include about seven passes to generatean effective square profile, and as many as 10-15 or more passes forother profiles. Such profiles may be scanned incrementally, in the sensethat the same region is scanned a number of times (e.g., four) with eachrepetition for a given path producing an incremental modification of therefractive index in the affected region. But after each incrementalmodification, the laser pulse focus is skipped to the next path, suchthat the refractive index profile takes shape incrementally across theprofile (as opposed to the writing of a complete index change along onepath, followed by a complete index change along a second path, etc.).This process will help obtain refractive index uniformity across thecross-sectional profile of the widened affected region.

Different regions or lines may warrant a different number of scans,depending on the location of the region or line within the waveguidecross-section. Increased scanning for interior lines and less scanningnear the edges may present advantages for waveguide shaping andwaveguide functionality. Such changes in the process may be accomplishedby changing the scanning speed, or speed at which the relative movementof the laser pulse focus along the waveguide propagation axis. Otherperformance advantages may be provided by changing the order ordirection of scanning. For example, one can start from left of thecross-sectional profile and move to the right, or vice versa, or perhapsstart in the center and alternate between left and right.

Skip-and-scan approaches may also involve skipping one or more lines orpaths. Such approaches may be designed to produce the ripple effectand/or introduce controlled polarization dependence to fabricate, forexample, a polarizer or a grating.

It should also be noted that the laser power level may be changed fordifferent lines. Examples of such power modulation include modulatingthe power to fabricate round cross-sectional profiles through edgeattenuation. Further, power modulation may be used to create double-lobecross-sections or other shapes to favor certain modes, such as TEM 01.Power modulation may also be used to avoid generating corners that maybecome a source of a micro-crack in the medium or substrate. Avoidingthe generation of corners also may help prevent stresses andstress-birefringence problems. Similarly, each line may be scanned at anequal or different scanning speed.

Set forth below are just a few of the possible combinations ofalternative techniques specified above:

(i) Scanning multiple lines while keeping the pulse energy constant andwith same number of passes per line, all of which written at the samescanning speed;

(ii) Scanning multiple lines with a change in the pulse energy to obtaina predetermined profile, such as Gaussian-like profile shape, where theline in the middle is scanned with the highest energy to obtain thelargest index change, the lines adjacent to the center line have asmaller energy applied thereto, and the energy is reduced for the nextpair of lines, and so on to the exterior of the profile; and,

(iii) Scanning multiple lines while keeping the pulse energy constantbut with a differing number of passes to obtain the predeterminedprofile (or via changing the writing speed).

With reference to FIGS. 4 and 5, the waveguide 300 fabricated via theskip-and-scan approach includes multiple adjacent waveguide portions310, 312, 314 generated via the modification of respective affectedregions along the waveguide propagation axis (in FIGS. 4 and 5, thex-axis). As shown, portions of the adjacent portions 310 and 312 arecontiguous, as with the adjacent regions 312 and 314. However, theadjacent waveguide portions need not be contiguous, but rather may bepositioned in any manner such that the propagation of a fundamental modeof a signal having a TIR wavelength is supported by the widened affectedregion created by the collection of regions 310, 312, and 314. Incontrast, each affected region 310, 312, 314 has a cross-sectionalprofile incapable of supporting the fundamental mode of that signalhaving a TIR wavelength. The collective cross-sectional refractive indexprofile may, but need not, have an effective rectilinear shape, and may,but need not, have a uniform refractive index.

The adjacent regions 310, 312 and 314 may constitute separate anddistinct index change profiles, but they also may overlap.

In accordance with an alternative embodiment, the laser beam focus isnot scanned in separate paths along the waveguide propagation axis, butrather scanned in a direction other than the waveguide propagation axiswhile it is scanned along the waveguide propagation axis. This techniquewill be referred to herein as “raster scanning” but the term “raster”should not be read to limit the technique to a certain pattern. Rasterscanning may involve continuous, rapid movement in a repetitive or otherpattern designed to move the focus in one or more directions other thanthe waveguide propagation axis. Such scanning involves rapid movement inthe sense that the non-axial pattern may be covered one or more timesfor each length portion of the waveguide. As the focus is scanned alongthe waveguide axis to write each such length portion, it may be rasteredin a particular direction (or directions) with either a fixed oradjustable raster rate or pattern. The raster pattern may take on anumber of forms, and is not limited to horizontal, lateral, or otherlinear traces.

The sample may be scanned with respect to focus along the waveguideoptical axis while the sample or beam is simultaneously dithered orrastered along a direction that is of a particular orientation to thescanning direction. This orientation may remain fixed or be variedrelative to the scanning direction as the prescribed waveguidepropagation axis may also vary in direction. Alternatively, a rotatingbeam may be used. In this case the beam is rotated in a small circlewith a desired diameter. This circle is perpendicular to the writingbeam propagation path. The waveguide is traced along one path. Here thepainting is achieved with the rotating beam. The beam rotation rate maybe fast relative to the waveguide scanning speed. Alternatively, thesample may be rotated or otherwise moved.

In general, raster scanning-based embodiments of the disclosed methodaddress the strong, very localized modulation (e.g., ripples) that maybe created between the various stripes that form painted waveguides.Modifications of standard processing parameters (for skip-and-scan) havebeen shown to reduce this effect. Reducing spacing between scan passesreduces modulation, and scanning in one direction with a retrace in theopposite direction at a 0.25 micron spacing from the first pass has beenshown to smooth the profile. However, tests have also shown that lateralraster-scanning provides a very smooth index profile solution. Asmoother index profile should help reduce scattering loss, especially atshorter wavelengths. The high frequency index modulation of the ripplesmay also be a source of scattering loss and create a polarizationdependent component to the scattering loss (of the order of 0.1 dB/cm at1550-nm). It should be noted that the lateral raster scanning may becombined, where possible (e.g., no significant bends in the waveguidepropagation axis) with longitudinal raster scanning for furthersmoothing and painting of the waveguide.

Raster scans may include a speed, power or other laser parameteradjustment as the laser beam focus is moved in the direction other thanthe waveguide propagation axis. Speeding up the scan rate when the focusnears a waveguide profile edge, for instance, will help maintain auniform refractive index profile. Otherwise, writing in the regions nearsuch edges would be undesirably enhanced as compared with the centerportions of the waveguide. Adjusting the laser parameters can be used toobtain any predetermined cross-sectional profile of the widened affectedregion.

Raster scanning may further include adjusting the raster scanningdirection to accommodate bends or turns in the waveguide, i.e., curvesin the waveguide propagation axis. Such adjustments may includeadjusting the direction in which raster scan occurs. For example, alateral raster scan would need to be adjusted to remain perpendicular tothe waveguide propagation axis.

Raster scanning may be accomplished using mechanically andnon-mechanically driven movement. While mechanical stages may be drivenat rates quick enough for raster scanning, any number of non-mechanicalschemes may be employed, the only qualification being the ability toadequately control the direction of the laser pulse beam in space and intime. Non-mechanical schemes known to those skilled in the art for laserdirection include the use of a galvanometer to move the mirrors reliedupon for laser beam control. A galvanometer may be used alone or inconjunction with other raster scan techniques.

Another non-mechanical approach to raster scanning would include animplementation system having acousto-optic deflectors. While theforegoing embodiments of the painting process may be implemented solelythrough mechanical translation stages, these stages may impose severallimitations under certain operational conditions. The accuracy of suchstages may be limited, and the stages cannot rapidly reverse direction.The stages may also introduce vibration when driven at high speed. Suchrestrictions are avoided through the use of acousto-optical deflectors,either alone or in combination with mechanical stages as appropriate.

In addition to their primary pointing or deflection function,acousto-optic deflectors may also be used to control the amplitude ofthe incoming manufacturing laser beam. One can thus vary the laserintensity during the raster scanning motion in order to create a morecomplex refractive index cross-sectional profile. For example, one maycreate round cross-sections instead of a square cross-section. Avoidingor reducing corners may decrease or eliminate some polarizationdependence effects.

An acousto-optic deflector may also be used to split the incomingmanufacturing laser beam in multiple beamlets and control thoseindependently. This approach may be used to speed up the overallmanufacturing process.

In summary, acousto-optic deflection techniques may provide continuousdeflection control, deflection and amplitude control, and/or controltechniques for multi-beam (or beamlets). In these ways, theacousto-optic embodiments of the disclosed method provide the capabilityto fabricate waveguides that have, among other aspects, both smoothindex profiles (to avoid strong localized modulation between thepainting stripes) and round or other non-corner shaped index profiles(through, e.g., amplitude control), as well as the capability to paintwith multiple beams.

Yet another embodiment of the disclosed painting approach involves theuse of multiple beams either alone or in conjunction with one or more ofthe above-specified embodiments. In one embodiment, the foci of themultiple beams are arranged with specified separations and scanned alongthe prescribed waveguide axis. This embodiment effectively realizes amultiplexed skip-and-scan implementation. Alternatively, the individualbeam foci can be rastered in specified pattern in conjunction with theselective removal or introduction of different beams realizing a hybrid“painting” of multiplex skip-and-scan and rastering.

Set forth below is another exemplary application of the above-describedpainting technique, one in which the fabrication methods are applied toaddress and/or augment polarization dependence.

Optical devices should introduce as little loss as possible and mustshow well-controlled polarization dependence. Optical devices aredesigned to either show no polarization dependence (as for mostcomponents used in telecommunications) or to show a strong polarizationdependence (as for some highly accurate sensors such as opticalgyroscopes). A manufacturing platform may provide either type offunctionality.

Unwanted polarization dependence affects many optical parameters,including all types of loss, coupling and splitting ratios at variousjunctions, and dispersion (i.e., propagation speed in an optical deviceis function of the signal polarization).

Waveguides produced with an ultrashort laser may exhibit somepolarization dependence. For example, tests have shown a slight lossdifference (0.1 dB/cm) between P-polarization and S-polarization forpainted waveguides fabricated using a skip-and-scan approach. Thiseffect, called PDL in the telecommunications field, may be eliminatedthrough a lateral raster scanning painting process to produce smootherindex profiles with less anisotropic modulation, together withsignificant reductions in PDL.

In connection with couplers and/or splitters, stress birefringencebetween waveguides may create polarization-dependence. To reduce thepolarization dependence of couplers and splitters, one may replace thesquare cross-sections with waveguides having round cross-sections inorder to eliminate stress birefringence at the corners. Alternativedesigns include where the energy is transferred vertically from onewaveguide to the other. Experimental data has shown that there is lessstress birefringence in that direction.

The converse of the foregoing approaches may be used to create strongpolarization dependence, or controlled polarization dependence. Suchapproaches may be useful in connection with, for example, polarizersused in numerous sensors to avoid sensitivity degradation due topolarization beating. The converse of the foregoing approaches mayfurther be used to create strong stress birefringence in order toexacerbate polarization dependence.

The polarization of the ultrashort laser beam may also be important tothe fabrication of waveguide devices having good transmission and otherperformance characteristics. Under certain circumstances, the process ofpainting a waveguide, as described in accordance with the embodimentsdisclosed herein, results in the generation of unwanted cracks. Thesecracks can introduce severe optical losses and other unwanted effects.To reduce the occasional formation of cracks, and/or to mitigate theeffects of the cracks, the polarization of the ultrashort laser beam iscontrolled. More particularly, the polarization may be controlled suchthat it remains fixed in the direction of the waveguide propagation axis(thereby necessitating adjustments thereto for waveguide bends).Alternatively, the polarization may be adjusted during scanning suchthat it is either continuously or occasionally modified.

Generally speaking, scanning with the ultrashort laser beam polarizationperpendicular to the waveguide propagation axis has been found to resultin severe crack formation. These cracks predominately run along thewaveguide propagation axis and can be of sufficient size and extent todrastically reduce the waveguide light throughput. To avoid such cracks,the stresses applied to the substrate by the painting process wouldotherwise need to be limited, thereby posing a functional limit to thepossible amount of index change (waveguide numerical aperture) providedby direct-write techniques. The cracks are often limited to one edge ofthe waveguide, but they could also run from one edge of the waveguidesto the opposite edge. A typical crack is typically longer than 50microns long.

On the other hand, when the laser polarization is parallel to thewaveguide propagation axis, the cracks are much less frequent and, whenthey do appear, they run perpendicular to the waveguide axis terminatingat the edge of the waveguide. This naturally makes the cracks short, andthey do not affect the waveguide transmission as severely as in theformer case.

In fact, the orientation of the crack has been found to be moredependent on the polarization orientation than on the waveguide axis.That is the crack orientation or line along which material separationoccurs is perpendicular to the polarization axis. For example, a crackwas produced when the laser polarization was set at 45 degrees to thewaveguide axis.

In light of the sizes, severity, and frequency of occurrence of thecracks associated with painting, another embodiment of the disclosedembodiment includes a dynamic adjustment (i.e., adjustment duringscanning) or control of the polarization of the laser such that it isalways parallel to the scanning direction, or waveguide propagationaxis, regardless whether the waveguide is straight or curved.

One way in which the polarization of the writing beam can be controlledwould be to insure that it remains parallel to the waveguide propagationaxis. The polarization of the writing beam may therefore be adjusted asa waveguide is written in order to have the polarization vector alwayspointing along the axis of the waveguide. To that end, the polarizationof the writing beam may be rotated to point in the desired directionusing a half-wave plate or other polarization-adjustment mechanism wellknown to those skilled in the art. Such rotation of the half-wave platemay be controlled by the same hardware and software that control the XYZstages that translate the device being manufactured.

In accordance with an alternative embodiment, the polarization may berotated at a fast speed relative to the scanning speed such that eachpoint along the waveguide effectively encounters a sweep of asignificant number of polarization directions. In such a case, theultrashort laser beam is said to be depolarized.

One way in which one can determine whether a waveguide is capable ofsupporting a signal of a certain wavelength, and/or otherwisecharacterize the waveguiding property of a region would be to evaluatethe ability of the region to capture an incoming signal and confine thesignal throughout the extent of the region. Generally speaking, thisdetermination should include analysis involving a bend of notinsignificant curvature. Alternatively, or in addition, one may look tothe calculated v-number of the waveguide, as is known to those skilledin the art, and whether it falls within a range bounded generally by theminimum v-number necessary for guiding any light at a certain wavelengthand by the maximum v-number for single-mode propagation at thatwavelength.

For example, one quantitative way to classify whether a waveguide iscapable of supporting a certain optical signal would be to determinewhether the signal is transmitted through a 90-degree bend or turnhaving a 1.5-cm radius of curvature with excess losses less than orequal to about 10%, where excess losses exclude all losses except thosespecifically due to bending. Under this classification methodology, theaffected region 100 shown in FIG. 1, the affected region 308 of FIG. 3,and the waveguide portions 310, 312, and 314 of FIGS. 4 and 5 areincapable of supporting the fundamental mode of a signal having a TIRwavelength.

Other ways of such classification would involve comparisons with theperformance of a single-mode telecommunications fiber. So, in terms ofbending losses, performance of the waveguide at similar levels as thefiber would qualify as supporting the optical signal in question.

Generally speaking, the above-described embodiments address the movementof the laser beam(s) focus or resulting voxel. The embodiments shouldnot be limited to any particular set of writing beam parameters, whichmay be significantly changed in connection with voxel motion. Beamparameters like pulse energy, pulse temporal shape, beam spatial shape,and aberration compensation, among others, are useful in defining theshape of the voxel, and subsequently, the shape of the painted indexprofile region. Dynamic beam modification may also be useful when thedistance between the focus and the substrate surface is changed,especially in connection with writing three-dimensional photoniccircuits.

The disclosed fabrication techniques will generally allow for thetransverse fabrication of waveguides. Transverse fabrication techniques,in turn, provide the ability to write complex patterns involving curvedwaveguides and waveguides at different depths. The disclosed techniquesalso address how to fabricate waveguides that are capable of supportingTIR-wavelength signals despite such complex patterns.

The above described techniques will greatly reduce manufacturing costand increase manufacturing yields of waveguide structures like AWG andinterleavers, or any device that operates on the basis of opticalinterference.

The techniques may generally be used to tailor the shape of the index ofrefraction profile of the waveguide to accommodate propagation at adesired wavelength. That is, the techniques provide a way to fabricatewaveguides of a certain cross-sectional shape, such as round, so thatthe waveguide size and shape is closely matched to single-mode fiberstransmitting TIR-wavelength signals. And the techniques still furtherallow control of the polarization dependence of the waveguides.Generally, the above-described painting techniques may be used forcreating waveguides of predetermined size and shape in a substratesolely using ultrashort laser pulses to effect refractive index changethroughout the waveguide. A pre-existing waveguide is not necessary.

The foregoing are but a few of the ways in which painting techniques andmethods through the use of an ultra-short pulse laser beam can improvethe fabrication and performance of optical devices. Those of ordinaryskill in the relevant art will recognize other beneficial applicationsof these techniques in improving performance and manufacturing yield ofthese and other structures. Any of the disclosed techniques could becombined with other disclosed techniques to further improve deviceoperation or manufacturing methods.

1. An optical waveguide device comprising: a bulk of uniform chemicalcomposition with an intrinsic refractive index; and, a plurality ofadjacent regions of the bulk, each adjacent region having a refractiveindex differing from the intrinsic refractive index and constituting arespective waveguide portion of a plurality of adjacent waveguideportions disposed in the bulk along a waveguide propagation axis, eachwaveguide portion having a cross-sectional refractive index profileincapable of supporting a fundamental mode of a signal having atelecommunications infrared (TIR) wavelength; wherein the plurality ofadjacent waveguide portions have a collective cross-sectional refractiveindex profile capable of supporting a fundamental mode of the signalhaving the TIR wavelength for propagation of the signal through theplurality of adjacent waveguide portions along the waveguide propagationaxis.
 2. The optical waveguide device of claim 1 wherein the collectivecross-sectional refractive index profile has an effective rectilinearshape.
 3. An optical waveguide device comprising: a bulk of uniformchemical composition with an intrinsic refractive index; and, aplurality of adjacent regions of the bulk, each adjacent region having arefractive index differing from the intrinsic refractive index andconstituting a respective waveguide portion of a plurality of adjacentwaveguide portions disposed in the bulk along a waveguide propagationaxis, each waveguide portion having a cross-sectional refractive indexprofile incapable of supporting a fundamental mode of a signal having atelecommunications infrared (TIR) wavelength; wherein the plurality ofadjacent waveguide portions have a collective cross-sectional refractiveindex profile capable of supporting a fundamental mode of the signalhaving the TIR wavelength and wherein the collective cross-sectionalrefractive index profile is uniform.
 4. The optical waveguide device ofclaim 1 wherein the plurality of adjacent waveguide portions arecontiguous.
 5. The optical waveguide device of claim 1 wherein thecollective cross-sectional refractive index profile has a non-uniformrefractive index profile.
 6. The optical waveguide device of claim 1wherein the plurality of adjacent waveguide portions do not overlap. 7.The optical waveguide device of claim 1, wherein the uniform chemicalcomposition of the bulk is a glassy material.
 8. The optical waveguidedevice of claim 1, wherein the cross-sectional refractive index profileof each waveguide portion of the plurality of adjacent waveguideportions has an elliptical shape.
 9. The optical waveguide device ofclaim 1, wherein the collective cross-sectional refractive index profilehas a dimension transverse to the waveguide propagation axis determinedby center-to-center distance between respective pairs of adjacentwaveguide portions of the plurality of adjacent waveguide portions and atotal number of the waveguide portions in the plurality of adjacentwaveguide portions.
 10. An optical waveguide device, comprising: a bulkof uniform chemical composition with an intrinsic refractive index; and;a waveguide disposed in the bulk along a waveguide propagation axis, thewaveguide comprising: a plurality of adjacent regions of the bulk, eachadjacent region having a refractive index differing from the intrinsicrefractive index and constituting a respective waveguide portion of aplurality of adjacent waveguide portions disposed along the waveguidepropagation axis, each waveguide portion having a cross-sectionalrefractive index profile incapable of supporting a fundamental mode of asignal having a telecommunications infrared (TIR) wavelength; whereinthe plurality of adjacent waveguide portions have a collectivecross-sectional refractive index profile capable of supporting afundamental mode of the signal having the TIR wavelength for propagationof the signal through the plurality of adjacent waveguide portions alongthe waveguide propagation axis; and, wherein the collectivecross-sectional refractive index profile has a dimension transverse tothe waveguide propagation axis determined by center-to-center distancesbetween respective pairs of adjacent waveguide portions of the pluralityof adjacent waveguide portions and a total number of the waveguideportions in the plurality of adjacent waveguide portions.
 11. Theoptical waveguide device of claim 10, wherein the uniform chemicalcomposition of the bulk is a glassy material.
 12. The optical waveguidedevice of claim 10, wherein the cross-sectional refractive index profileof each waveguide portion of the plurality of adjacent waveguideportions has an elliptical shape.
 13. The optical waveguide device ofclaim 10, wherein the plurality of adjacent waveguide portions arecontiguous.
 14. The optical waveguide device of claim 10, wherein theplurality of adjacent waveguide portions are overlapping.
 15. Theoptical waveguide device of claim 10, wherein the uniform chemicalcomposition of the bulk is fused silica.
 16. The optical waveguidedevice of claim 1, wherein the uniform chemical composition of the bulkis fused silica.
 17. The optical waveguide device of claim 1, whereinthe plurality of adjacent waveguide portions are overlapping.